TPS1110D datasheet(7/10 Pages) TI1

Part #	TPS1110D

Description	SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

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Manufacturer	TI1 [Texas Instruments]

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TPS1110, TPS1110Y

SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

SLVS100B – OCTOBER 1994 – REVISED JANUARY 1998

7

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

– 1

– 0.10

– 0.01

– 0.1

– 1

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

DRAIN CURRENT

– 10

ID – Drain Current – A

400

300

100

0

0 – 0.7 – 1.4– 2.1 – 2.8– 3.5 – 4.2

500

600

CAPACITANCE†

vs

DRAIN-TO-SOURCE VOLTAGE

700

– 4.8– 5.6 – 6.3

200

–7

Coss

VDS – Drain-to-Source Voltage – V

Crss‡

VGS = – 2.7 V

VGS = – 3 V

VGS = – 5 V

VGS = –7 V

TJ = 25°C

VGS = – 4.5 V

– 100

VGS = 0

f = 1 MHz

TJ = 25°C

Ciss†

800

900

1000

Figure 5

Figure 6

†

Crss + Cgd,Coss + Cds ) Cgd

‡

C

iss +

Cgs ) Cgd,Cds(shorted)

STATIC DRAIN-TO-SOURCE

ON-STATE RESISTANCE (NORMALIZED)

vs

JUNCTION TEMPERATURE

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

VSD – Source-to-Drain Voltage – V

TJ – Junction Temperature – °C

– 100

– 1

– 0.1

– 10

TJ = 150°C

TJ = 25°C

TJ = – 40°C

– 10

1.3

1

0.9

0.7

1.4

1.5

1.6

1.2

1.1

0.8

– 50

0

50

100

150

VGS = – 4.5 V

ID = – 6 A

Pulse Test

– 1

VGS = 0

Pulse Test

Figure 7

Figure 8

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