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Document Number: 83627

2

Rev. 2.0, 29-Mar-11

This document is subject to change without notice.

IL410, IL4108

High dV/dt, Low Input Current

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Surge current

2.5

A

Power dissipation

100

mW

Derate from 25 °C

1.33

mW/°C

OUTPUT

Peak off-state voltage

IL410

600

V

IL4108

800

V

RMS on-state current

300

mA

Single cycle surge current

3A

Total power dissipation

500

mW

Derate from 25 °C

6.6

mW/°C

COUPLER

Isolation test voltage

between emitter and detector

t = 1 s

5300

Pollution degree (DIN VDE 0109)

2

Creepage distance

 7mm

Clearance distance

 7mm

Comparative tracking index per

DIN IEC112/VDE 0303 part 1, group IIIa

per DIN VDE 6110

CTI

 175

Isolation resistance





Storage temperature range

- 55 to + 150

°C

Ambient temperature

- 55 to + 100

°C

max.

10 s dip soldering

 0.5 mm from case bottom

260

°C