VLMS1300, VLMO1300, VLMY1300, VLMG1300, VLMTG1300, VLMB1300, VLMB1310

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 25-Jul-12

2

Document Number: 82437

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

VLMS1300, VLMO1300, VLMY1300, VLMG1300 (AlInGaP technology)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

5V

DC forward current

30

mA

Surge forward current

1/10 duty cycle, 0.1 ms pulse width

80

mA

Power dissipation

≤ 25 °C

75

mW

Operating temperature range

- 35 to + 85

°C

Storage temperature range

- 45 to + 85

°C

IRED solder conditions

according Vishay specifications

260

°C

VLMTG1300, VLMB1300, VLMB1310 (InGaN technology)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

DC forward current

20

mA

Surge forward current

1/10 duty cycle, 0.1 ms pulse width

100

mA

Power dissipation

≤ 25 °C

76

mW

ESD thershold,

for VLMB1310 with protection only

HBM

8000

V

Operating temperature range

- 20 to + 80

°C

Storage temperature range

- 30 to + 100

°C

IRED solder conditions

according Vishay specifications

260

°C

VLMS1300, SUPER RED

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity

18

54

-

mcd

Dominant wavelength

-

631

-

nm

Peak wavelength

-

639

-

nm

Angle of half intensity

ϕ

-± 65

-

deg

Spectral line half width

Δλ

-20-

nm

Forward voltage

-2.0

2.4

V

Junction capacitance

-40-

pF

Reverse current

-

-

10

μA

VLMO1300, SOFT ORANGE

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity

45

90

-

mcd

Dominant wavelength

-

605

-

nm

Peak wavelength

-

611

-

nm

Angle of half intensity

ϕ

-± 65

-

deg

Spectral line half width

Δλ

-17-

nm

Forward voltage

-2.0

2.4

V

Junction capacitance

-40-

pF

Reverse current

-

-

10

μA