SQJ412EP

www.vishay.com

Vishay Siliconix

S12-1860-Rev. C, 13-Aug-12

1

Document Number: 65935

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to

ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

40

0.0041

0.0052

32

Configuration

Single

D

G

S

N-Channel MOSFET

4

6.15

mm

5.13

mm

3

2

1

G

S

S

S

D

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SQJ412EP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

± 20

32

A

32

32

128

Single Pulse Avalanche Current

L = 0.1 mH

53

Single Pulse Avalanche Energy

140

mJ

83

W

27

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

65

°C/W

Junction-to-Case (Drain)

1.8