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5LN01C-TB-H Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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5LN01C-TB-H Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 7 page 5LN01C No.6555-1/7 Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 0.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 0.4 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V *”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7013A-013 Ordering number : EN6555B 62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 5LN01C N-Channel Silicon MOSFET General-Purpose Switching Device Applications http://semicon.sanyo.com/en/network Product & Package Information • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB Marking Electrical Connection SANYO Semiconductors DATA SHEET 1 : Gate 2 : Source 3 : Drain SANYO : CP 12 3 2.9 0.95 0.4 0.1 5LN01C-TB-E 5LN01C-TB-H TB YB 1 2 3 |
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