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ATP202 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP202 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 7 page ATP202 No. A1317-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=25A 10 17 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=25A, VGS=10V 912 mΩ RDS(on)2 ID=13A, VGS=4.5V 14 20 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 1650 pF Output Capacitance Coss 285 pF Reverse Transfer Capacitance Crss 160 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16 ns Rise Time tr 185 ns Turn-OFF Delay Time td(off) 93 ns Fall Time tf 93 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=50A 27 nC Gate-to-Source Charge Qgs 7.5 nC Gate-to-Drain “Miller” Charge Qgd 4nC Diode Forward Voltage VSD IS=50A, VGS=0V 0.97 1.2 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ATP202-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID=25A RL=0.6Ω VDD=15V VOUT ATP202 VIN 10V 0V VIN |
Similar Part No. - ATP202_12 |
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Similar Description - ATP202_12 |
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