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ECH8309 Datasheet(PDF) 4 Page - Sanyo Semicon Device |
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ECH8309 Datasheet(HTML) 4 Page - Sanyo Semicon Device |
4 / 7 page ECH8309 No. A1418-4/7 A S O Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC VGS -- Qg IT14421 IT14420 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 18 12 16 8 --4.5 --4.0 410 14 6 2 VDS= --6V ID= --9.5A --10 --100 2 3 5 7 2 3 5 7 2 3 5 7 5 7 2 3 --1.0 --0.01 --0.1 2 23 5 2 3 7 --0.01 --0.1 2 35 7--1.0 Operation in this area is limited by RDS(on). 1ms 10ms ID= --9.5A IDP= --40A DC operation (T a=25 °C) 35 7 --10 100ms PW ≤10μs Ta=25 °C Single pulse When mounted on ceramic substrate (900mm2 ×0.8mm) Ambient Temperature, Ta -- °C PD -- Ta IT14422 00 0 20 40 0.2 60 0.8 1.0 0.6 0.4 1.6 1.4 1.5 1.2 80 100 120 1.8 140 160 When mounted on ceramic substrate (900mm2 ×0.8mm) |
Similar Part No. - ECH8309_12 |
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Similar Description - ECH8309_12 |
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