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BYV26BGP Datasheet(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd |
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BYV26BGP Datasheet(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd |
1 / 2 page 200V-1000V 1.0A BYV26AGP THRU BYV26EGP 1 of 2 Web Site: www.taychipst.com FEATURES E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS D D D D SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350 °C /10sec/0.375”lead length at 5 lbs tension Operate at Ta =55 °C with no thermal run away Typical Ir<0.1 µA SYMBOL BYV26 AGP BYV26 BGP BYV26 CGP BYV26 DGP BYV26 EGP units Maximum Recurrent Peak Reverse Voltage Vrrm 200 400 600 800 1000 V Maximum RMS Voltage Vrms 140 280 420 560 700 V Maximum DC blocking Voltage Vdc 200 400 600 800 1000 V Reverse avalanche breakdown voltage at IR = 0.1 mA V(BR)R (min) 300 500 700 900 1100 V Maximum Average Forward Rectified Current 3/8”lead length at Ta =55 °C If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30 A Maximum Forward Voltage at rated Forward Current and 50 °C Vf 2.5 V Non-repetitive peak reverse avalanche energy (Note 1) Ersm 10 mJ Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =150 °C Ir 5.0 150.0 µA µA Maximum Reverse Recovery Time (Note 2) Trr 30 75 nS Typical Junction Capacitance (Note 3) Cj 15.0 pF Typical Thermal Resistance (Note 4) Rθja 55.0 °C /W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 °C Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off 2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted |
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