MBR2H100SFT3G datasheet(4/5 Pages) ONSEMI

Part #	MBR2H100SFT3G

Description	Surface Mount Schottky Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR2H100SFT3G, NRVB2H100SFT3G

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4

TYPICAL CHARACTERISTICS

Figure 7. Capacitance

VR, REVERSE VOLTAGE (V)

80

70

60

50

30

20

10

0

20

40

60

80

120

40

90 100

100

140

TJ = 25°C

0.1

0.00001

PULSE TIME (s)

100

10

0.1

0.01

0.0001

0.001

0.01

1.0

10

100

0.000001

50% (DUTY CYCLE)

25%

10%

5.0%

2.0%

1.0%

SINGLE PULSE

1000

1.0

0.1

0.00001

PULSE TIME (s)

100

10

0.1

0.01

0.0001

0.001

0.01

1.0

10

100

0.000001

50% (DUTY CYCLE)

25%

10%

5.0%

2.0%

1.0%

SINGLE PULSE

1000

Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad)

1.0

1000

Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)

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