MCH5908

No. A1218-1/6

Features

•

Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting

efficiency greatly

•

The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSX

15

V

Gate-to-Drain Voltage

VGDS

--15

V

Gate Current

IG

10

mA

Drain Current

ID

50

mA

Allowable Power Dissipation

PD

1 unit

200

mW

Total Power Dissipation

PT

300

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7021A-009

Ordering number : ENA1218A

91212 TKIM/22410AC TKIM TC-00002292

SANYO Semiconductors

DATA SHEET

http://www.sanyosemi.com/en/network/

Product & Package Information

• Package

: MCPH5

• JEITA, JEDEC

: SC-88A, SC-70-5, SOT-353

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

1 : Drain1

2 : Source1/Source2

3 : Drain2

4 : Gate2

5 : Gate1

SANYO : MCPH5

2.0

0.3

0.65

0.15

0 to 0.02

54

12

3

54

12

3

N

K

5

4

13

2

MCH5908H-TL-E

MCH5908G-TL-E

MCH5908

N-Channel Silicon Junction FET

High-Frequency Amplifier, AM Amplifier,

Low-Frequency Amplifier Applications

TL