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MCH6663 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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MCH6663 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 9 page MCH6663 No.8758-1/9 Features • ON-resistance Nch : RDS(on)1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) • 4V drive • Halogen free compliance • Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 1.8 --1.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 7.2 --6 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V *”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7022A-006 Ordering number : EN8758A 62712 TKIM/D0711PE TKIM TC-00002677 SANYO Semiconductors DATA SHEET MCH6663 http://semicon.sanyo.com/en/network Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 2.0 0.3 0.65 0.15 0 t o 0.02 65 4 12 3 65 4 12 3 MCH6663-TL-H N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications XQ 65 4 13 2 |
Similar Part No. - MCH6663_12 |
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Similar Description - MCH6663_12 |
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