MMBFJ177LT1G datasheet(2/3 Pages) ONSEMI

Part #	MMBFJ177LT1G

Description	JFET Chopper

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBFJ177LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc)

V(BR)GSS

30

−

Vdc

Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc)

IGSS

−

1.0

nAdc

Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)

VGS(off)

0.8

2.5

Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2)

IDSS

1.5

20

mAdc

Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc)

ID(off)

−

1.0

nAdc

Drain Source On Resistance (ID = 500 mAdc)

rDS(on)

−

300

W

Input Capacitance

VDS = 0, VGS = 10 Vdc

f = 1.0 MHz

Ciss

−

11

pF

Reverse Transfer Capacitance

Crss

−

5.5

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.

TYPICAL CHARACTERISTICS

Figure 1. Drain Current vs. Drain−Source

Voltage

Figure 2. Reverse Transfer Capacitance

VDS, DRAIN−SOURCE VOLTAGE (V)

12

10

8

6

4

2

0

1

2

3

4

6

7

8

−25

−20

−15

−10

−5

0

4

6

10

12

14

Figure 3. Input Capacitance

VDS, DRAIN−SOURCE VOLTAGE (V)

−25

−20

−15

−10

−5

0

8

12

20

24

32

5

VGS = 0 V

VGS = −0.9 V

VGS = −0.7 V

VGS = −0.5 V

VGS = −0.3 V

VGS = −0.1 V

2

8

4

16

28

VGS = 0 V

f = 1 MHz

VGS = 0 V

f = 1 MHz

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