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MMUN2134LT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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MMUN2134LT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3 http://onsemi.com 4 Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) hFE 80 130 − Collector *Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 Vdc Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.9 − Vdc Input Voltage (on) (VCE = 0.2 V, IC = 3.0 mA) Vi(on) − 1.3 − Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 15.4 22 28.6 kW Resistor Ratio R1/R2 0.38 0.47 0.56 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. |
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