DTC123EM3 datasheet(3/10 Pages) ONSEMI

Part #	DTC123EM3

Description	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

3 / 10 page

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3

http://onsemi.com

3

Table 2. THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

THERMAL CHARACTERISTICS (SC−59) (MUN2231)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

PD

230

338

1.8

2.7

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

540

370

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

264

287

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SOT−23) (MUNN2231L)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

PD

246

400

2.0

3.2

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

508

311

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

174

208

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5231)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

PD

202

310

1.6

2.5

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

618

403

°C/W

Thermal Resistance,

(Note 1)

Junction to Lead

(Note 2)

RqJL

280

332

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SC−75) (DTC123EE)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

PD

200

300

1.6

2.4

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

600

400

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

THERMAL CHARACTERISTICS (SOT−723) (DTC123EM3)

Total Device Dissipation

TA = 25°C

(Note 1)

(Note 2)

Derate above 25°C

(Note 1)

(Note 2)

PD

260

600

2.0

4.8

mW

mW/°C

Thermal Resistance,

(Note 1)

Junction to Ambient

(Note 2)

RqJA

480

205

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

Similar Part No. - DTC123EM3

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	DTC123EM3	103Kb / 11P	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k January, 2015 ??Rev. 2
	DTC123EM3	102Kb / 11P	Digital Transistors (BRT) November, 2016 ??Rev. 4
	DTC123EM3T5G	82Kb / 10P	Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network March, 2006 ??Rev. 3
	DTC123EM3T5G	133Kb / 11P	Digital Transistors March, 2011 ??Rev. 4
	DTC123EM3T5G	103Kb / 11P	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k January, 2015 ??Rev. 2

More results

DTC123EM3 Datasheet(PDF) 3 Page - ON Semiconductor

DTC123EM3 Datasheet(HTML) 3 Page - ON Semiconductor

Similar Part No. - DTC123EM3

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL