DTC123EET1G datasheet(4/10 Pages) ONSEMI

Part #	DTC123EET1G

Description	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

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Manufacturer	ONSEMI [ON Semiconductor]

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Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

2.3

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 5.0 mA, VCE = 10 V)

hFE

8.0

15

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 10 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 1.0 mA)

Vi(off)

−

1.3

−

Vdc

Input Voltage (on)

(VCE = 0.2 V, IC = 20 mA)

Vi(on)

−

1.8

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

1.5

2.2

2.9

kW

Resistor Ratio

R1/R2

0.8

1.0

1.2

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

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