 Semiconductor Components Industries, LLC, 2012

September, 2012 − Rev. 0

1

Publication Order Number:

DTC123ED/D

MUN5231DW1,

NSBC123EDXV6

Dual NPN Bias Resistor

Transistors

R1 = 2.2 kW, R2 = 2.2 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current − Continuous

100

mAdc

Input Forward Voltage

12

Vdc

Input Reverse Voltage

10

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

MUN5231DW1T1G

SOT−363

3,000/Tape & Reel

NSBC123EDXV6T1G

SOT−563

4,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

MARKING DIAGRAMS

PIN CONNECTIONS

7H M G

G

1

6

7H M G

G

1

7H

= Specific Device Code

M

= Date Code*

G

= Pb-Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SOT−363

CASE 419B

SOT−563

CASE 463A

(1)

(2)

(3)

(6)

(5)

(4)