Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NSBA114YDP6T5G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NSBA114YDP6T5G
Description  Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSBA114YDP6T5G Datasheet(HTML) 3 Page - ON Semiconductor

  NSBA114YDP6T5G Datasheet HTML 1Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 2Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 3Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 4Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 5Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 6Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 7Page - ON Semiconductor NSBA114YDP6T5G Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.2
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
140
Collector−Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
0.7
Vdc
Input Voltage (on)
(VCE = 0.2 V, IC = 1.0 mA)
Vi(on)
0.9
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.17
0.21
0.25
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
125
100
75
50
25
0
−25
−50
0
50
100
150
200
250
400
150
(1) (2) (3)
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. copper trace
350
300


Similar Part No. - NSBA114YDP6T5G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NSBA114YDP6T5G ONSEMI-NSBA114YDP6T5G Datasheet
102Kb / 6P
   Dual Digital Transistors (BRT)
October, 2008 ??Rev. 5
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com