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C0402C105K8PACTU Datasheet(PDF) 3 Page - ON Semiconductor |
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C0402C105K8PACTU Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 13 page  NCP729 http://onsemi.com 3 Table 3. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, 4−bump CSP package Thermal Resistance, Junction−to−Air (Note 3) Thermal Resistance, Junction−to−Air (Note 4) RqJA 90 157 °C/W 3. Specified according to JEDEC 51.7 4−Layer Board. 4. Single component mounted on 4−Layer Board, 480 mm2, Top Layer thickness: 1 oz, Cu Area: 100 mm2. Table 4. ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.0 V, whichever is greater; IOUT = 10 mA, CIN = COUT = 1 mF unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage VIN 2.0 5.5 V Output Voltage Accuracy VOUT + 0.3 V ≤ VIN ≤ 5.5 V 0 mA ≤ IOUT ≤ 200 mA VOUT −2 +2 % Line Regulation VOUT + 0.3 V ≤ VIN ≤ 5.5 V RegLINE 150 mV/V Load Regulation IOUT = 0 mA to 200 mA RegLOAD 2 mV/mA Dropout Voltage (Note 6) VDO = VIN – (VOUT(NOM) – 100 mV) IOUT = 200 mA VOUT = 1.8 V VOUT = 2.5 V VOUT = 2.6 V VOUT = 2.8 V VOUT = 2.85 V VOUT = 3.0 V VOUT = 3.3 V VDO 170 100 90 80 80 70 65 220 140 130 120 120 110 100 mV Quiescent Current IOUT = 0 mA IQ 35 50 mA Ground Current IOUT = 200 mA VOUT < 1.8 V VOUT ≥ 1.8 V IGND 255 155 300 200 mA Disable Current VEN = 0 V IDIS 0.3 1 mA Output Current Limit VOUT = VOUT(NOM) – 100 mV IOUT 250 400 530 mA Output Short Circuit Current VOUT = 0 V ISC 250 400 530 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO 0.9 0.4 V EN Pin Input Current VEN = 5.5 V IEN 100 500 nA Turn−on Time VOUT = 0 V to 98% VOUT(NOM), after assertion of the EN tON 150 ms Power Supply Rejection Ratio VIN = 3.8 V, VOUT = 3.3 V VPP = 100 mV IOUT = 200 mA f = 100 Hz f = 1 kHz f = 10 kHz PSRR 74 72 56 dB Output Noise Voltage VOUT = 1.8 V, IOUT = 200 mA f = 100 Hz to 100 kHz VN 10 mVrms Line Transient VOUT + 0.3 V ≤ VIN ≤ VOUT + 1.3 V or VOUT + 0.3 V ≤ VIN ≤ VOUT + 1.3 V in 1 ms ±20 mV Load Transient IOUT = 1 mA to 200 mA or IOUT = 200 mA to 1 mA in 1 ms DVOUT ±80 mV Undervoltage Lock−out VIN rising from 0 V to 5.5 V UVLO 1.3 1.6 1.9 V Thermal Shutdown Temperat- ure Temperature increasing from TJ = +25°C TSD 165 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH − 20 − °C 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V. |
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