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MGSF1N02EL Datasheet(PDF) 2 Page - Motorola, Inc |
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MGSF1N02EL Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 5 page MGSF1N02ELT1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) V(BR)DSS 20 — — Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 1.0 10 µAdc Gate–Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS — — ±0.1 µAdc ON CHARACTERISTICS(1) Gate–Source Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 0.5 — 1.0 Vdc Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.0 A) (VGS = 2.5 Vdc, ID = 0.75 A) rDS(on) — — — — 0.085 0.115 Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Ciss — 160 — pF Output Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Coss — 130 — Transfer Capacitance (VDG = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Crss — 60 — SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (V 5 Vd I 1 0 Ad td(on) — 6.0 — ns Rise Time (VDD = 5 Vdc, ID = 1.0 Adc, tr — 26 — Turn–Off Delay Time ( DD , D , RL = 5 Ω, RG = 6 Ω) td(off) — 117 — Fall Time tf — 105 — Total Gate Charge (VDS = 16 Vdc, ID = 1.2 Adc, VGS = 4.0 Vdc) QT — 6500 — pC SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS — — 0.6 A Pulsed Current ISM — — 0.75 Forward Voltage(2) (VGS = 0 Vdc, IS = 0.6 Adc) VSD — — 1.2 V (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0 1.5 0.5 2.5 1 Figure 1. Transfer Characteristics 0.5 1.4 1.7 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. On–Region Characteristics TJ = 150°C –55 °C 0 0.5 1 2.5 0 1 1.2 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1.5 0.2 2 2 0.6 2.0 1.4 0.8 1.1 2 25 °C 0.4 0.8 1.6 1.8 VGS = 1.25 V 1.5 V 1.75 V 2.0 V 2.25 V 2.5 V |
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