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NVMFS5830NL Datasheet(PDF) 4 Page - ON Semiconductor |
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NVMFS5830NL Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVMFS5830NL http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 1000 2000 3000 4000 5000 6000 7000 8000 010 20 30 40 Figure 7. Capacitance Variation VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V Ciss Coss Crss 0 2 4 6 8 10 010 20 30 40 60 Figure 8. Gate−to−Source Voltage vs. Total Charge Qg, TOTAL GATE CHARGE (nC) VDS = 32 A ID = 60 A TJ = 25°C QT Qgs Qgd 10 100 1000 1 10 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) VDD = 20 V ID = 10 A VGS = 4.5 V td(off) td(on) tf tr 0 25 50 75 125 0.60 0.65 0.70 0.80 0.90 Figure 10. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C 0.1 1 10 1000 0.01 0.1 1 10 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 ms 1 ms dc 10 ms 100 100 50 70 80 90 100 120 110 0.95 0.85 0.75 150 175 10 ms |
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