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SIC779CD-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIC779CD-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 17 page www.vishay.com 2 Document Number: 67538 S11-0703-Rev. B, 18-Apr-11 Vishay Siliconix SiC779 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note: a. TA = 25 °C and all voltages referenced to PGND = CGND unless otherwise noted. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. Note: a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to PGND = CGND unless otherwise noted. ORDERING INFORMATION Part Number Package SiC779CD-T1-GE3 PowerPAK MLP66-40 SiC779DB Reference board ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Min. Max. Unit Input Voltage VIN - 0.3 20 V Switch Node Voltage (DC) VSW - 0.3 20 Drive Input Voltage VDRV - 0.3 7 Control Input Voltage VCIN - 0.3 7 Logic Pins VPWM, VDSBL#, VTHDN, VSMOD - 0.3 VCIN + 0.3 Boot Voltage DC (referenced to CGND) VBS - 0.3 27 Boot Voltage < 200 ns Transient (referenced to CGND) - 0.3 29 Boot to Phase Voltage DC VBS_PH - 0.3 7 Boot to Phase Voltage < 200 ns - 0.3 9 Ambient Temperature Range TA - 40 125 Maximum Junction Temperature TJ 150 °C Storage Junction Temperature TSTG - 65 150 Soldering Peak Temperature 260 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min. Typ. Max. Unit Input Voltage VIN 312 16 V Control Input Voltage VCIN 4.5 5.5 Drive Input Voltage VDRV 4.5 5.5 Switch Node VSW_DC 12 16 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Power Dissipation at TPCB = 25 °C PD_25C 25 W Maximum Power Dissipation at TPCB = 100 °C PD_100C 10 Thermal Resistance from Junction to Top Rth_J_TOP 15 °C/W Thermal Resistance from Junction to PCB Rth_J_PCB 5 |
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