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NGB8207N Datasheet(PDF) 6 Page - ON Semiconductor |
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NGB8207N Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 7 page NGB8207N, NGB8207BN http://onsemi.com 6 TYPICAL ELECTRICAL CHARACTERISTICS dc 10 ms 1 ms 100 ms 10 ms VGE = 4.0 V Single Pulse TC = 25°C 100 10 1 Figure 13. Inductive Switching Time Variation vs. Temperature Figure 14. Forward Biased Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) 1 10 1000 100 10 1 100 1000 TEMPERATURE (°C) 50 75 25 100 175 150 125 td(on) VCC = 300 V VGE = 5.0 V RG = 1000 W td(off) tf tr IC = 10 A L = 300 mH 0.1 VCE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,TIME (S) 1 0.1 Figure 15. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) 0.00001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJC(t) 0.2 Single Pulse 0.1 0.05 0.02 0.01 Duty Cycle = 0.5 |
Similar Part No. - NGB8207N_11 |
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Similar Description - NGB8207N_11 |
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