NGD15N41CLT4G datasheet(5/11 Pages) ONSEMI

Part #	NGD15N41CLT4G

Description	Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220

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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,

NGP15N41ACL

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5

TEMPERATURE (°C)

−50

50

70

10

−10

90

−30

130 150

Mean + 4 σ

Mean − 4 σ

Mean

GATE TO EMITTER VOLTAGE (VOLTS)

1.2

0.2

0

2

0.6

1

1.6

10000

1000

100

10

0

6

4

0

8

10

12

Figure 7. Collector−to−Emitter Voltage versus

Gate−to−Emitter Voltage

Figure 8. Capacitance Variation

Figure 9. Gate Threshold Voltage versus

Temperature

Figure 10. Minimum Open Secondary Latch

Current versus Temperature

TEMPERATURE (°C)

Figure 11. Typical Open Secondary Latch

Current versus Temperature

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

Figure 12. Inductive Switching Fall Time

versus Temperature

TEMPERATURE (°C)

0

120

60

40

20

140

180

−50

50

75

25

0

100

−25

125

10

20

5

15

0

25

30

TJ = 150°C

175

VCC = 50 V

VGE = 5 V

RG = 1000 Ω

L = 6 mH

200

80 100

160

−50

50

70

30

−10

90

−30

130 150

tf

VCC = 300 V

VGE = 5 V

RG = 1000 Ω

IC = 10 A

L = 300 μH

Crss

Ciss

Coss

2.5

36

7

58

49

1

0.5

2

0

3

1.5

10

IC = 15 A

IC = 10 A

IC = 5 A

1

30

110

0.4

0.8

1.4

1.8

150

L = 3 mH

L = 2 mH

TEMPERATURE (°C)

−50

50

75

25

0

100

−25

125

10

20

5

15

0

25

30

175

VCC = 50 V

VGE = 5 V

RG = 1000 Ω

L = 6 mH

150

L = 3 mH

L = 2 mH

2

10

110

td(off)

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NGD15N41CLT4G Datasheet(PDF) 5 Page - ON Semiconductor

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