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NGTB40N120LWG Datasheet(PDF) 4 Page - ON Semiconductor |
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NGTB40N120LWG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 9 page NGTB40N120LWG http://onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) 1.5 1.0 0.5 0 0 20 40 60 80 120 140 Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 140 120 100 80 60 40 20 0 0 2 4 8 0 1000 Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 16 0 4 6 12 56 48 40 32 24 16 1000 3.0 100 160 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 64 2.0 20 15 10 5 0 0 60 120 180 240 300 360 420 480 100 10 1 20 40 60 80 100 120 140 160 24 32 40 48 56 64 100 10 1 2.5 TJ = 25°C TJ = 150°C VCE = 600 V Eon Eoff tf td(on) tr td(off) VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W Eon Eoff 2 8 10 tf td(on) tr td(off) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 1 3 5 6 7 |
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