© Semiconductor Components Industries, LLC, 2012

September, 2012 − Rev. 2

1

Publication Order Number:

NTB5860N/D

NTB5860N, NTP5860N,

NVB5860N

N-Channel Power MOSFET

60 V, 220 A, 3.0 mW

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

60

V

Gate−to−Source Voltage − Continuous

$20

V

Continuous Drain

Steady

State

220

A

156

Power Dissipation,

Steady

State

283

W

Pulsed Drain Current

660

A

Current Limited by Package

130

A

Operating and Storage Temperature Range

−55 to

+175

°C

Source Current (Body Diode)

130

A

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.3 mH)

735

mJ

Lead Temperature for Soldering

Purposes (1/8″ from Case for 10 Seconds)

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case (Drain) Steady State

0.53

°C/W

Junction−to−Ambient − Steady State (Note 1)

28

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

http://onsemi.com

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

MARKING DIAGRAMS

& PIN ASSIGNMENTS

G

= Pb−Free Device

A

= Assembly Location*

Y

= Year

WW = Work Week

NTP

5860NG

AYWW

1

Gate

3

Source

4

Drain

2

Drain

1

Gate

3

Source

4

Drain

2

Drain

1

2

3

4

CASE 418B

STYLE 2

NTB

5860NG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

60 V

3.0 mW @ 10 V

220 A

G

S

N−CHANNEL MOSFET

D

*Could be one or two digit alpha or numeric code