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NTB5860NT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTB5860NT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 2 1 Publication Order Number: NTB5860N/D NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Current, RqJC Steady State TC = 25°C ID 220 A TC = 100°C 156 Power Dissipation, RqJC Steady State TC = 25°C PD 283 W Pulsed Drain Current tp = 10 ms IDM 660 A Current Limited by Package IDMmax 130 A Operating and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 130 A Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH) EAS 735 mJ Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.53 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 28 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). http://onsemi.com TO−220AB CASE 221A STYLE 5 1 2 3 4 MARKING DIAGRAMS & PIN ASSIGNMENTS G = Pb−Free Device A = Assembly Location* Y = Year WW = Work Week NTP 5860NG AYWW 1 Gate 3 Source 4 Drain 2 Drain 1 Gate 3 Source 4 Drain 2 Drain 1 2 3 4 D2PAK CASE 418B STYLE 2 NTB 5860NG AYWW See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 60 V 3.0 mW @ 10 V RDS(on) MAX ID MAX V(BR)DSS 220 A G S N−CHANNEL MOSFET D *Could be one or two digit alpha or numeric code |
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