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NTB6412AN Datasheet(PDF) 4 Page - ON Semiconductor

Part # NTB6412AN
Description  N-Channel Power MOSFET
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTB6412AN Datasheet(HTML) 4 Page - ON Semiconductor

  NTB6412AN_12 Datasheet HTML 1Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 2Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 3Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 4Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 5Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 6Page - ON Semiconductor NTB6412AN_12 Datasheet HTML 7Page - ON Semiconductor  
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NTB6412AN, NTP6412AN, NVB6412AN
http://onsemi.com
4
0
1000
2000
3000
4000
5000
0
1020
3040
50
60708090
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
0
2
4
6
8
10
0
10
203040506070
QT
Qgd
Qgs
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
VDS = 80 V
ID = 58 A
TJ = 25°C
1
10
100
1000
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
td(off)
tf
tr
td(on)
VDS = 80 V
ID = 58 A
VGS = 10 V
0
10
20
30
40
50
60
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
TJ = 25°C
VGS = 0 V
0.1
1
10
100
1000
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 10 V
SINGLE PULSE
TC = 25°C
10 ms
100 ms
10 ms
dc
1 ms
0
100
200
300
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
ID = 44.7 A
100
80
60
40
20
0
VDS
VGS


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