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NTB6413AN Datasheet(PDF) 4 Page - ON Semiconductor |
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NTB6413AN Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NTB6413AN, NTP6413AN, NVB6413AN http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 1000 2000 3000 4000 0 10203040 5060708090 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation TJ = 25°C VGS = 0 V Ciss Coss Crss 0 2 4 6 8 10 0 1020304050 QT Qgd Qgs Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge ID = 42 A TJ = 25°C 1 10 100 1000 1 10 100 RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance td(off) tf tr td(on) VDS = 80 V ID = 42 A VGS = 10 V 0 10 20 30 40 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage versus Current TJ = 25°C VGS = 0 V 0.1 1 10 100 1000 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 10 V SINGLE PULSE TC = 25°C 10 ms 100 ms 10 ms dc 1 ms 0 50 100 150 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature ID = 56 A 100 80 60 40 20 0 VDS VGS 0.4 200 |
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