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NVB5860NLT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NVB5860NLT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTB5860NL, NTP5860NL, NVB5860NL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 60 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA 6.1 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V TJ = 25°C 1.0 mA VGS = 0 V VDS = 60 V TJ = 125°C 100 Gate−Source Leakage Current IGSS VDS = 0 V, VGS = $20 V $100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250 mA 1.0 3.0 V Threshold Temperature Coefficient VGS(th)/TJ −7.7 mV/°C Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 20 A 2.4 3.0 mW VGS = 4.5 V, ID = 20 A 2.8 3.6 Forward Transconductance gFS VDS = 15 V, ID = 30 A 47 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 13216 pF Output Capacitance Coss 1127 Transfer Capacitance Crss 752 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V, ID = 40 A 220 nC Threshold Gate Charge QG(TH) 13 Gate−to−Source Charge QGS 37 Gate−to−Drain Charge QGD 54 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time td(on) VGS = 10 V, VDD = 48 V, ID = 100 A, RG = 2.5 W 25 ns Rise Time tr 58 Turn−Off Delay Time td(off) 98 Fall Time tf 144 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V IS = 40 A TJ = 25°C 0.76 1.1 Vdc TJ = 125°C 0.60 Reverse Recovery Time trr VGS = 0 V, IS = 100 A, dIS/dt = 20 A/ms 50 ns Charge Time ta 25 Discharge Time tb 25 Reverse Recovery Stored Charge QRR 71 nC 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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