© Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 1

1

Publication Order Number:

NTB6412AN/D

NTB6412AN, NTP6412AN,

NVB6412AN

N-Channel Power MOSFET

100 V, 58 A, 18.2 mW

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

100

V

Gate−to−Source Voltage − Continuous

$20

V

Continuous Drain Cur-

Steady

State

58

A

41

Power Dissipation

Steady

State

167

W

Pulsed Drain Current

240

A

Operating Junction and Storage Temperature

Range

−55 to

+175

°C

Source Current (Body Diode)

58

A

Single Pulse Drain−to−Source Avalanche

300

mJ

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case (Drain) Steady State

0.9

°C/W

Junction−to−Ambient (Note 1)

33

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

http://onsemi.com

MARKING DIAGRAM

& PIN ASSIGNMENT

6412AN = Specific Device Code

G

= Pb−Free Device

A

= Assembly Location

Y

= Year

WW = Work Week

1

2

3

4

CASE 418B

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note 1)

100 V

18.2 mW @ 10 V

58 A

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

NTP

6412ANG

AYWW

1

Gate

3

Source

4

Drain

2

Drain

1

Gate

3

Source

4

Drain

2

Drain

NTB

6412ANG

AYWW

G

S

D

N−Channel