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NTB6412ANG Datasheet(PDF) 2 Page - ON Semiconductor |
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NTB6412ANG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTB6412AN, NTP6412AN, NVB6412AN http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 V Drain−to−Source Breakdown Voltage Temper- ature Coefficient V(BR)DSS/TJ 103 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 100 V TJ = 25°C 1.0 mA TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = $20 V $100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250 mA 2.0 4.0 V Negative Threshold Temperature Coefficient VGS(th)/TJ 9.2 mV/°C Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 58 A 16.8 18.2 mW VGS = 10 V, ID = 20 A 15.6 18.2 Forward Transconductance gFS VDS = 5 V, ID = 20 A 31 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 2700 3500 pF Output Capacitance Coss 400 500 Reverse Transfer Capacitance Crss 150 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 80 V, ID = 58 A 73 100 nC Threshold Gate Charge QG(TH) 2.5 Gate−to−Source Charge QGS 13.5 Gate−to−Drain Charge QGD 35 Plateau Voltage VGP 5.6 V Gate Resistance RG 2.2 W SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time td(on) VGS = 10 V, VDD = 80 V, ID = 58 A, RG = 6.2 W 16 ns Rise Time tr 140 Turn−Off Delay Time td(off) 70 Fall Time tf 126 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD IS = 58 A TJ = 25°C 0.96 1.3 V TJ = 125°C 0.89 Reverse Recovery Time trr VGS = 0 V, IS = 58 A, dISD/dt = 100 A/ms 85 ns Charge Time ta 60 Discharge Time tb 25 Reverse Recovery Charge QRR 270 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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