NTP6413AN datasheet(2/7 Pages) ONSEMI

Part #	NTP6413AN

Description	N-Channel Power MOSFET 100 V, 42 A, 28 m

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Manufacturer	ONSEMI [ON Semiconductor]

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NTB6413AN, NTP6413AN, NVB6413AN

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ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

100

V

Drain−to−Source Breakdown Voltage Temper-

ature Coefficient

V(BR)DSS/TJ

115

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 100 V

TJ = 25°C

1.0

mA

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = $20 V

$100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(th)

VGS = VDS, ID = 250 mA

2.0

4.0

V

Negative Threshold Temperature Coefficient

VGS(th)/TJ

8.1

mV/°C

Drain−to−Source On−Resistance

RDS(on)

VGS = 10 V, ID = 42 A

25.6

28

mW

Forward Transconductance

gFS

VGS = 5 V, ID = 20 A

17.9

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V,

f = 1 MHz

1800

pF

Output Capacitance

Coss

280

Reverse Transfer Capacitance

Crss

100

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 80 V,

ID = 42 A

51

nC

Threshold Gate Charge

QG(TH)

2.0

Gate−to−Source Charge

QGS

10

Gate−to−Drain Charge

QGD

26

Plateau Voltage

VGP

5.8

V

Gate Resistance

RG

2.4

W

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time

td(on)

VGS = 10 V, VDD = 80 V,

ID = 42 A, RG = 6.2 W

13

ns

Rise Time

tr

84

Turn−Off Delay Time

td(off)

52

Fall Time

tf

71

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

IS = 42 A

TJ = 25°C

0.92

1.3

V

TJ = 125°C

0.83

Reverse Recovery Time

trr

VGS = 0 V, IS = 42 A,

dISD/dt = 100 A/ms

73

ns

Charge Time

ta

56

Discharge Time

tb

17

Reverse Recovery Charge

QRR

230

nC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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