NTSV2080CT datasheet(2/5 Pages) ONSEMI

Part #	NTSV2080CT

Description	Very Low Forward Voltage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NTSV2080CT

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

80

V

Average Rectified Forward Current

(Rated VR, TC = 130°C)

Per device

Per diode

IF(AV)

20

10

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz, TC = 125°C)

Per device

Per diode

IFRM

40

20

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

100

A

Operating Junction Temperature

TJ

−40 to +150

°C

Storage Temperature

Tstg

−40 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Maximum Thermal Resistance

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

2.0

70

°C/W

ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)

Rating

Symbol

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 1)

(IF = 5 A, TJ = 25°C)

(IF = 10 A, TJ = 25°C)

(IF = 5 A, TJ = 125°C)

(IF = 10 A, TJ = 125°C)

vF

0.55

0.65

0.50

0.58

−

0.98

−

0.82

V

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 125°C)

IR

20

10

600

20

mA

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%

ORDERING INFORMATION

Device

Package

Shipping

NTSV2080CTG

TO−220AB

(Pb−Free/Halide Free)

50 Units / Rail

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