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RD0106T-H Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # RD0106T-H
Description  Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

RD0106T-H Datasheet(HTML) 2 Page - Sanyo Semicon Device

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RD0106T
No. A1704-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=1mA
600
V
Forward Voltage
VF
IF=1A
1.1
1.3
V
Reverse Current
IR
VR=600V
10
μA
Reverse Recovery Time
trr1IF=1A, di / dt=100A/μs40
50
ns
trr2IF=0.5A, IR=1A
16
ns
Thermal Resistance
Rth(j-c)
Junction -Case
6
°C / W
Ordering Information
Device
Package
Shipping
memo
RD0106T-H
TP
500pcs./bag
Pb Free and halogen Free
RD0106T-TL-H
TP-FA
700pcs./reel
IF -- VF
IFSM -- t
Time, t -- s
Cj -- VR
Reverse Voltage, VR -- V
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
IR -- VR
0
1.2
0.4
0.8
1.0
0.2
0.6
1.4
0.001
0.01
0.1
1.0
10
IT15497
0.1
1.0
22
10
2
2
10
1.0
3
5
7
5
3
f=100kHz
IT15499
100
2
3
57
3
57
3
57
200
0
600
IT15498
100
10
0.1
1.0
0.01
0.001
500
100
300
400
125
°C
Ta=150
°C
100
°C
75
°C
50
°C
25
°C
7 0.01
23
7 0.1
0
52
2
3
37 1.0
5
12
14
8
4
10
6
2
IT15500


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