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CY62148EV30LL-55SXI Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY62148EV30LL-55SXI
Description  4-Mbit (512 K 횞 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62148EV30LL-55SXI Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY62148EV30 MoBL®
Document Number: 38-05576 Rev. *O
Page 6 of 18
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min
Typ [13]
Max
Unit
VDR
VCC for data retention
1.5
V
ICCDR
[14]
Data retention current
VCC = 1.5 V,
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or
VIN < 0.2 V
Industrial /
Automotive-A
–0.8
7
A
tCDR
[15]
Chip deselect to data
retention time
0–
ns
tR
[16]
Operation recovery time
CY62148EV30LL-45
45
ns
CY62148EV30LL-55
55
ns
Data Retention Waveform
Figure 2. Data Retention Waveform
VCC(min)
VCC(min)
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
VCC
CE
Notes
13. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
14. Chip Enable (CE) must be HIGH at CMOS level to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating.
15. Tested initially and after any design or process changes that may affect these parameters.
16. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s.


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