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NL17SH126 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NL17SH126
Description  Noninverting 3-State Buffer
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NL17SH126 Datasheet(HTML) 2 Page - ON Semiconductor

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NL17SH126
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
−0.5 to 7.0
−0.5 to VCC + 0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
±20
mA
IOUT
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND
50
mA
PD
Power dissipation in still air
50
mW
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
−65 to +150
°C
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 1)
±100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
−55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature


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