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NL37WZ07USG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NL37WZ07USG
Description  Triple Buffer with Open Drain Outputs
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NL37WZ07USG Datasheet(HTML) 3 Page - ON Semiconductor

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NL37WZ07
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DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
−55°C 3 TA 3 125°C
Symbol
Parameter
Condition
(V)
Min
Typ
Max
Min
Max
Units
VIH
High−Level Input Voltage
1.65 to 1.95
2.3 to 5.5
0.75 VCC
0.7 VCC
0.75 VCC
0.7 VCC
V
VIL
Low−Level Input Voltage
1.65 to 1.95
2.3 to 5.5
0.25 VCC
0.3 VCC
0.25 VCC
0.3 VCC
V
ILKG
Z−State Output Leakage
Current
VIN = VIL
VOUT = VCC or GND
1.65 to 5.5
±5.0
±10.0
mA
VOL
Low−Level Output
Voltage
VIN = VIH or VIL
IOL = 100 mA
1.65 to 5.5
0.0
0.1
0.1
V
IOL = 4 mA
1.65
0.08
0.24
0.24
IOL = 8 mA
2.3
0.20
0.3
0.3
IOL = 12 mA
2.7
0.22
0.4
0.4
IOL = 16 mA
3.0
0.28
0.4
0.4
IOL = 24 mA
3.0
0.38
0.55
0.55
IOL = 32 mA
4.5
0.42
0.55
0.55
IIN
Input Leakage Current
VIN = 5.5 V or GND
0 to 5.5
±0.1
±1.0
mA
IOFF
Power Off
Leakage Current
VIN = 5.5 V or
VOUT = 5.5 V
0
1
10
mA
ICC
Quiescent Supply
Current
VIN = 5.5 V or GND
5.5
1
10
mA
AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W
Symbol
Parameter
Condition
VCC (V)
TA = 25°C
−55°C 3 TA 3 125°C
Units
Min
Typ
Max
Min
Max
tPZL
Propagation Delay
(Figure 3 and 4)
RL = R1 = 500 W, CL = 50 pF
1.8 ± 0.15
7.8
7.8
ns
RL = R1 = 500 W, CL = 50 pF
2.5 ± 0.2
1.2
3.7
5.8
1.2
6.4
RL = R1 = 500 W, CL = 50 pF
3.3 ± 0.3
0.8
2.9
4.4
0.8
4.8
RL = R1 = 500 W, CL = 50 pF
5.0 ± 0.5
0.5
2.3
3.5
0.5
3.9
tPLZ
Propagation Delay
(Figure 3 and 4)
RL = R1 = 500 W, CL = 50 pF
1.8 ± 0.15
7.8
7.8
ns
RL = R1 = 500 W, CL = 50 pF
2.5 ± 0.2
1.2
2.8
5.8
1.2
6.4
RL = R1 = 500 W, CL = 50 pF
3.3 ± 0.3
0.8
2.1
4.4
0.8
4.8
RL = R1 = 500 W, CL = 50 pF
5.0 ± 0.5
0.5
1.4
3.5
0.5
3.9
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Units
CIN
Input Capacitance
VCC = 5.5 V, VI = 0 V or VCC
2.5
pF
COUT
Output Capacitance
VCC = 5.5 V, VI = 0 V or VCC
4.0
pF
CPD
Power Dissipation Capacitance (Note 6)
10 MHz, VCC = 5.5 V, VI = 0 V or VCC
4.0
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin ) ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin ) ICC  VCC.


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