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STN4438 Datasheet(PDF) 1 Page - Stanson Technology |
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STN4438 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page STN4438 N Channel Enhancement Mode MOSFET 8.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4438 2009. V1 DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 PART MARKING Y: Year Code A: Process Code FEATURE l 60V/8.2A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V l 60V/7.6A, RDS(ON) = 30mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PDF created with pdfFactory Pro trial version www.pdffactory.com |
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