STN9926AA datasheet(3/7 Pages) STANSON

Part #	STN9926AA

Description	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Manufacturer	STANSON [Stanson Technology]

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STN9926AA

Dual N Channel Enhancement Mode MOSFET

6.0A

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN9926AA 2007. V1

3

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=250uA

20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250 uA

0.6

1.2

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±

100 nA

VDS=20V,VGS=0V

1

Zero Gate Voltage Drain

Current

IDSS

TJ=55℃

VDS=20V,VGS=0V

5

uA

On-State Drain Current

ID(on)

VDS≦5V,VGS=4.5V

6

A

Drain-source On-Resistance

RDS(on)

VGS=4.5V, ID=6.0A

VGS=2.5V, ID=5.0A

0.024

0.032

0.030

0.042

Ω

Forward Tran Conductance

gfs

VDS=5.0V,ID=3.6A

10

S

Diode Forward Voltage

VSD

IS=1.7A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

2.0

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

VDS=10V,VGS=4.5V

ID≣6.0A

2.1

nC

Input Capacitance

Ciss

565

Output Capacitance

Coss

84

Reverse TransferCapacitance

Crss

VDS=8.0V,VGS=0V

f=1MHz

22

pF

10

14

Turn-On Time

td(on)

tr

16

20

33

40

Turn-Off Time

td(off)

tf

VDD=10V,RL=6Ω

ID=1A,VGEN=4.5V

RG=6Ω

3

10

nS

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