STP4407 datasheet(3/6 Pages) STANSON

Part #	STP4407

Description	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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3 / 6 page

STP

STP4

4

44

4

407

07

P Channel Enhancement Mode MOSFET

-

12A

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294

FAX: (650) 9389295

STP4407 2009. V1

3

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source

Breakdown Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

V

Gate Threshold

Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1.0

-3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±25V

±100

nA

Zero Gate Voltage

Drain Current

IDSS

TJ=55℃

VDS=-30V,VGS=0V

-1

uA

VDS=-30V,VGS=0V

-5

On-State Drain

Current

ID(on)

VDS=-5V,VGS=-10V

-60

A

Drain-source On-

Resistance

RDS(on)

VGS=-20V,ID=-12A

VGS=-10V,ID=-12A

VGS=-5V, ID=-10A

9

10

15

mΩ

Forward

Transconductance

gfs

VDS=-5V,ID=-10A

26

S

Diode Forward Voltage

VSD

IS=-1.0A,VGS=0V

-1

V

Dynamic

Total Gate Charge

Qg

VDS=-15V,VGS=0V

f=1MHz

30

nC

Gate-Source Charge

Qgs

4.3

Gate-Drain Charge

Qgd

10

Input Capacitance

Ciss

VDS ==-15V,VGS=0V

f=1MHz

2076

2500

pF

Output Capacitance

Coss

400

Reverse

TransferCapacitance

Crss

302

Turn-On Time

td(on)

tr

VDD=15V,RL=1.25Ω

ID=-1A,VGEN=-10V

RG=3Ω

10.4

nS

24

Turn-Off Time

td(off)

tf

12.6

12

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