VS-85EPF12 datasheet(2/8 Pages) VISHAY

Part #	VS-85EPF12

Description	Fast Soft Recovery Rectifier Diode, 85A

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-85EPF12 Soft Recovery Series

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Vishay Semiconductors

Revision: 17-Jun-11

2

Document Number: 93159

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

VFM

85 A, TJ = 25 °C

1.36

V

Forward slope resistance

rt

TJ = 150 °C

4.03

m



Threshold voltage

VF(TO)

0.87

V

Maximum reverse leakage current

IRM

TJ = 25 °C

VR = Rated VRRM

0.1

mA

TJ = 150 °C

15

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Reverse recovery time

trr

IF at 85 Apk

25 A/μs

25 °C

480

ns

Reverse recovery current

Irr

7.1

A

Reverse recovery charge

Qrr

2.1

μC

Snap factor

S

0.5

I

FM

t

rr

dir

dt

I

RM(REC)

Q

rr

t

a

t

b

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ, TStg

- 40 to 150

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation

0.35

°C/W

Maximum thermal resistance,

junction to ambient

RthJA

40

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

0.2

Approximate weight

6g

0.21

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style PowerTab®

85EPF12

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