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SQS404EN Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SQS404EN
Description  Automotive N-Channel 30 V (D-S) 175 °C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SQS404EN Datasheet(HTML) 1 Page - Vishay Siliconix

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SQS404EN
www.vishay.com
Vishay Siliconix
S11-2129 Rev. D, 31-Oct-11
1
Document Number: 65457
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
•100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width
 300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.013
RDS(on) () at VGS = 4.5 V
0.015
RDS(on) () at VGS = 2.5 V
0.022
ID (A)
16
Configuration
Single
D
G
S
N-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK® 1212-8
Bottom View
Part Marking Code: Q003
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and Halogen-free
SQS404EN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Currenta
TC = 25 °C
ID
16
A
TC = 125 °C
16
Continuous Source Current (Diode Conduction)a
IS
16
Pulsed Drain Currentb
IDM
64
Single Pulse Avalanche Current
L = 0.1 mH
IAS
29
Single Pulse Avalanche Energy
EAS
42
mJ
Maximum Power Dissipationb
TC = 25 °C
PD
62.5
W
TC = 125 °C
20
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mountc
RthJA
81
°C/W
Junction-to-Case (Drain)
RthJC
2.4


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