SQS482EN datasheet(4/13 Pages) VISHAY

Part #	SQS482EN

Description	Automotive N-Channel 30 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQS482EN

www.vishay.com

Vishay Siliconix

S12-1860-Rev. B, 13-Aug-12

4

Document Number: 67074

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

5

10

15

20

25

30

Q

g - Total Gate Charge (nC)

I

D = 10 A

V

DS = 15 V

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-1.0

-0.7

-0.4

-0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 16.4 A

V

GS = 4.5 V

V

GS = 10 V

0.00

0.02

0.04

0.06

0.08

0.10

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

30

32

34

36

38

40

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

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