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TC7SG17FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7SG17FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TC7SG17FE 2009-09-18 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG17FE Schmitt Buffer Features • High output current : ±8 mA (min) at VCC = 3.0 V • Super high speed operation : tpd = 3.7 ns (typ.) at VCC = 3.3 V,15pF • Operating voltage range : VCC = 0.9 to 3.6 V • 5.5-V tolerant input. • 3.6-V power down protection output. Marking Pin Assignment (top view) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 4.6 V DC input voltage VIN −0.5 to 7.0 V −0.5 to 4.6 (Note 1) DC output voltage VOUT −0.5 to VCC + 0.5 (Note 2) V Input diode current IIK −20 mA Output diode current IOK −20 (Note 3) mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0V Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings. Note 3: VOUT < GND (ESV) Weight: 0.003 g (typ.) Product name W L 5 VCC 4 OUT Y IN A 2 GND 3 NC 1 |
Similar Part No. - TC7SG17FE_09 |
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Similar Description - TC7SG17FE_09 |
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