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TC7W00F_09 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TC7W00F_09
Description  Dual 2-Input NAND Gate
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 2 page
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TC7W00F/FU/FK
2009-08-04
2
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
IEC Logic Symbol
Truth Table
Operating Ranges
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2.0 to 6.0
V
Input voltage
VIN
0 to VCC
V
Output voltage
VOUT
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
Input rise and fall time
tr , tf
0 to 400 (VCC = 6.0 V)
ns
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±25
mA
300 (FM8, SM8)
Power dissipation
PD
200 (US8)
mW
Storage temperature
Tstg
−65 to 150
°C
Lead temperature (10 s)
TL
260
°C
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
OUT Y
&
IN A
IN B




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