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TC7W02FU_09 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7W02FU_09
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TC7W02F/FU/FK
2009-08-04
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40 to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
2.0
1.5
1.5
4.5
3.15
3.15
High-level input voltage
VIH
6.0
4.2
4.2
2.0
0.5
0.5
4.5
1.35
1.35
Low-level input voltage
VIL
6.0
1.8
1.8
V
2.0
1.9
2.0
1.9
4.5
4.4
4.5
4.4
IOH = −20 μA
6.0
5.9
6.0
5.9
IOH = −4 mA
4.5
4.18
4.31
4.13
High-level output voltage
VOH
VIN = VIL
IOH = −5.2 mA
6.0
5.68
5.80
5.63
2.0
0.0
0.1
0.1
4.5
0.0
0.1
0.1
IOL = 20 μA
6.0
0.0
0.1
0.1
IOL = 4 mA
4.5
0.17
0.26
0.33
Low-level output voltage
VOL
VIN = VIH
or VIL
IOL = 5.2 mA
6.0
0.18
0.26
0.33
V
Input leakage current
IIN
VIN = VCC or GND
6.0
±0.1
±1.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
1.0
10.0
μA




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