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TC7W66F_09 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7W66F_09
Description  Dual Bilateral Switch
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TC7W66F/FU/FK
2009-09-30
3
Operating Ranges
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2 to 12
V
Control input voltage
VIN
0 to VCC
V
Switch I/O voltage
VI/O
0 to VCC
V
Operating temperature range
Topr
−40 to 85
°C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
Input rise and fall time
tr, tf
0 to 250 (VCC = 10.0 V)
ns
Electrical Characteristics
DC Electrical Characteristics
Ta
= 25°C
Ta
= –40
to 85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
2.0
1.5
1.5
4.5
3.15
3.15
9.0
6.3
6.3
High level
VIHC
12.0
8.4
8.4
2.0
0.5
0.5
4.5
1.35
1.35
9.0
2.7
2.7
Control input
voltage
Low level
VILC
12.0
3.6
3.6
V
4.5
96
170
200
9.0
55
85
100
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA
12.0
45
80
90
2.0
160
4.5
70
100
130
9.0
50
75
95
ON resistance
RON
VIN = VIHC
VI/O = VCC or GND
II/O ≤ 1 mA
12.0
45
70
90
Ω
4.5
10
9.0
5
Difference of ON
resistance between
switches
ΔRON
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA
12.0
5
Ω
Input/output leakage
current (switch off)
IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC
12.0
±100
±1000
nA
Switch input leakage
current
(switch on output open)
IIZ
VOS = VCC or GND
VINH = VIHC
12.0
±100
±1000
nA
Control input current
IIN
VIN = VCC or GND
6.0
±100
±1000
nA
6.0
1.0
10.0
9.0
4.0
40.0
Quiescent supply current
ICC
VIN = VCC or GND
12.0
8.0
80.0
μA




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