SSM3J36TU

2008-06-11

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J36TU

○

Power Management Switches

• 1.5-V drive

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

-20

V

Gate-source voltage

±8

V

DC

-330

Drain current

Pulse

-660

mA

500

Drain power dissipation

800

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note1: Mounted on an FR4 board

(25.4 mm

Note2: Mounted on a ceramic board.

(25.4 mm

Marking

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

UFM

1: Gate

2: Source

3: Drain

1.7±0.1

2.1±0.1

1

2

3

P X

1

2

3

12

3