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SSM6J414TU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6J414TU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page  SSM6J414TU 3 5. 5. 5. 5. Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (T Static Characteristics (T Static Characteristics (T Static Characteristics (Taaaa = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance (Note 1) (Note 2) (Note 3) (Note 3) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) |Yfs| Test Condition VGS = ±8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -1 mA, VGS = 0 V ID = -1 mA, VGS = 5 V VDS = -3 V, ID = -1 mA ID = -6.0 A, VGS = -4.5 V ID = -5.5 A, VGS = -2.5 V ID = -3.0 A, VGS = -1.8 V ID = -1.5 A, VGS = -1.5 V VDS = -3 V, ID = -2.0 A Min -20 -15 -0.3 9.1 Typ. 18 21 25 29 18.2 Max ±1 -1 -1.0 22.5 26 36 54 Unit µA V mΩ S Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain- source breakdown voltage is lowered in this mode. Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 3: Pulse measurement. 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (T Dynamic Characteristics (T Dynamic Characteristics (T Dynamic Characteristics (Taaaa = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (turn-on time) Switching time (turn-off time) Symbol Ciss Crss Coss ton toff Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -10 V, ID = -2.0 A VGS = 0 to -2.5 V, RG = 4.7 Ω, Duty ≤ 1%, Input: tr, tf < 5 ns Common source, See Chapter 5.3 Min Typ. 1650 90 220 77 206 Max Unit pF ns 5.3. 5.3. 5.3. 5.3. Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Fig. Fig. Fig. Fig. 5.3.1 5.3.1 5.3.1 5.3.1 Test Circuit of Switching Time Test Circuit of Switching Time Test Circuit of Switching Time Test Circuit of Switching Time Fig. Fig. Fig. Fig. 5.3.2 5.3.2 5.3.2 5.3.2 Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform Input Waveform/Output Waveform 2012-07-19 Rev.3.0 |
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