SSM6J502NU

2011-01-26

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ)

SSM6J502NU

Power Management Switch Applications

• 1.5V drive

Characteristic

Symbol

Rating

Unit

Drain-Source voltage

−20

V

Gate-Source voltage

±8

V

DC

−6

Drain current

Pulse

−24

A

1

Power dissipation

t ≦10s

2

W

Channel temperature

150

°C

Storage temperature

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: The pulse width limited by max channel temperature.

Note 2: Mounted on FR4 board.

(25.4 mm

Marking(Top View)

Equivalent Circuit(Top View)

Pin Condition(Top View)

Unit: mm

UDFN6B

JEDEC

―

JEITA

―

TOSHIBA

2-2AA1A

Weight: 8.5 mg (typ.)

5

1

3

SP2

2

4

6

Polarity marking

Polarity marking (on the top)

*Electrodes : on the bottom

13

2

5

4

6

1

3

2

5

4

6

Drain

Source

1,2,5,6: Drain

3: Gate

4: Source