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SSM6J502NU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM6J502NU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page SSM6J502NU 2011-01-26 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ) SSM6J502NU Power Management Switch Applications • 1.5V drive • Low ON-resistance: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±8 V DC ID −6 Drain current Pulse IDP (Note 1) −24 A PD(Note 2) 1 Power dissipation t ≦10s 2 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) Unit: mm UDFN6B JEDEC ― JEITA ― TOSHIBA 2-2AA1A Weight: 8.5 mg (typ.) 5 1 3 SP2 2 4 6 Polarity marking Polarity marking (on the top) *Electrodes : on the bottom 13 2 5 4 6 1 3 2 5 4 6 Drain Source 1,2,5,6: Drain 3: Gate 4: Source |
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