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SSM6N15AFU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6N15AFU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 5 page  SSM6N15AFU 2010-11-22 3 ID – VDS 0 0 0.2 0.4 0.6 300 100 400 0.8 1.0 200 ID – VGS 1000 0 10 100 0.1 1 0.01 4.0 1.0 2.0 3.0 RDS (ON) – ID 0 200 300 400 100 0 4 6 2 5 1 3 RDS (ON) – Ta −50 0 50 150 100 0 5 2 6 1 3 4 Common source Pulse test 10 mA / 4.0 V Vth – Ta 2.0 0 −50 0 150 50 100 1.0 Common source VDS = 3 V ID = 0.1 mA 0 4 0 RDS (ON) – VGS 8 12 4 8 2 6 10 10 2 6 Drain-source voltage VDS (V) Gate-source voltage VGS (V) Drain current ID (mA) Gate-source voltage VGS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) ID = 10 mA / VGS = 2.5 V Common source Ta = 25 °C Pulse test Common source VDS = 3 V Pulse test Common source Ta = 25°C Pulse test ID = 10 mA Common source Pulse test VGS = 10 V 2.1 V 3.0 V 4.0 V 2.3 V 2.5 V 2.7 V − 25 °C Ta = 100 °C 25 °C VGS = 2.1 V 10 V 4.0 V 2.7 V 3.0 V 2.3 V 2.5 V − 25 °C Ta = 100 °C 25 °C |
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